PART |
Description |
Maker |
ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode 4A, 600V Stealth Diode 4A 600V Stealth Diode 4A, 600V Stealth⑩ Diode 4A, 600V StealthDiode
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
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IRF[International Rectifier]
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IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
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IRF[International Rectifier]
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STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode 8A 600V Stealth Diode 8A, 600V Stealth Diode 8A条,600V的隐形二极管
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FAIRCHILD[Fairchild Semiconductor] SAMSUNG[Samsung semiconductor] Fairchild Semiconductor Corporation SAMSUNG SEMICONDUCTOR CO. LTD. Fairchild Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
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HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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FAIRCHILD[Fairchild Semiconductor]
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IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
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International Rectifier IRF
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STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
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IRF[International Rectifier]
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